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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION *High Collector Current-IC= 5A *Low Saturation Voltage : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA *High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS *Designed for audio frequency amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 30 30 6 UNIT V V V Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @ Ta=25 5.0 10 2.0 1.0 A A A PC Collector Power Dissipation @ TC=25 TJ Junction Temperature Storage Temperature Range 10 W 150 -55~150 Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2583 TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA 0.15 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A 0.25 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.1A 1.5 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 A hFE-1 DC Current Gain IC= 1A ; VCE= 2V 150 600 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 50 fT Current-Gain--Bandwidth Product IC= 50mA ; VCE= 10V 120 MHz COB Output Capacitance IE= 0 ; VCB= 10V, ftest= 1MHz 77 pF isc Websitewww.iscsemi.cn 2 |
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